Title
Modeling and optimization of transport processes in modern nanoelectronic devices
Creator
Žeželj, Milan.
Copyright date
2016
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Autorstvo-Nekomercijalno 3.0 Srbija (CC BY-NC 3.0)
License description
Dozvoljavate umnožavanje, distribuciju i javno saopštavanje dela, i prerade, ako se navede ime autora na način odredjen od strane autora ili davaoca licence. Ova licenca ne dozvoljava komercijalnu upotrebu dela. Osnovni opis Licence: http://creativecommons.org/licenses/by-nc/3.0/rs/deed.sr_LATN Sadržaj ugovora u celini: http://creativecommons.org/licenses/by-nc/3.0/rs/legalcode.sr-Latn
Language
English
Cobiss-ID
Committee report
Theses Type
Doktorska disertacija
description
Datum odbrane: 2. 03. 2017.
Other responsibilities
mentor
Radovanović, Jelena, 1973-
član komisije
Milanović, Vitomir, 1947-
član komisije
Stanković, Igor.
član komisije
Radunović, Jovan, 1949-
član komisije
Malešević, Branko, 1965-
Academic Expertise
Tehničko-tehnološke nauke
University
Univerzitet u Beogradu
Faculty
Elektrotehnički fakultet
Alternative title
Моделовање и оптимизација транспортних процеса у савременим наноелектронским уређајима
Publisher
[M. Žeželj]
Format
130 listova
description
Electrical and Computer Engineering -Nanoelectronics and Photonics / Elektrotehnika i raqunarstvo - Nanoelektronika i fotonika
Abstract (en)
A functionality of modern nanoelectronic devices cannot be precisely described
without using appropriate statistical methods and models needed for understanding
dierent transport properties in those devices. Therefore, in this thesis we develop
and integrate dierent numerical approaches for modeling and optimization of
transport processes, such as algorithms for percolation detection, conjugate gradient
methods, and simulated annealing algorithms. Using these methods and algorithms
we propose dierent models that describe and optimize eects of structural and geometrical
parameters on transport properties of modern nanoelectronic devices, such
as transparent conducting nanowire networks, thin-lm carbon nanotube transistors,
and quantum cascade lasers. For transparent networks of randomly distributed
conducting nanowires, we propose an electrical conductivity model that explicitly
depends on the nanowire density and junction-to-nanowire conductance ratio. Using
the proposed model we quantify a relationship between the optical transparency
and the electrical conductivity of the transparent nanowire networks. For thin-lm
transistors based on random networks of as-grown single-walled carbon nanotubes,
we determine the carbon nanotube density, length, and channel dimensions under
which the transistors simultaneously attain high on-current and high on/o ratio.
Finally, we show that the decrease in the output characteristics of GaAs/AlGaAs
quantum cascade laser in the presence of an intense external magnetic eld is signi-
cantly moderated by the presence of interface roughness scattering. We also present
an ecient numerical algorithm for optimization of quantum cascade laser active
region parameters and calculation of its output characteristics in a magnetic feld.
Abstract (sr)
Funkcionalnost savremenih nanoelektronskih ureaja se ne moe precizno
opisati bez korixea odgovarajuih statistiqkih metoda i modela potre-
bnih za opisivae raznovrsnih transportnih procesa u tim ureajima. Zbog
toga smo u ovoj tezi razvili i integrisali razliqite numeriqke pristupe
za modelovae i optimizaciju transportnih procesa, kao xto su algoritmi
za detektovae perkolacije, konjugovani gradijentni metodi i algoritmi za
simulirano odgrevae. Na osnovu ovih metoda i algoritama predloili smo
razliqite modele koji opisuju i optimizuju uticaj strukturnih i geometri-
jskih parametara na transportna svojstva savremenih nanoelektronskih ure-
aja, kao xto su prozirni provodnici sa mreama nanoica, tankoslojni
tranzistori sa ug eniqnim nanotubama i kvantni kaskadni laseri. Za prozirne
mree nasumiqno rasporeenih provodnih nanoica, predloili smo model
elektriqne provodnosti koji eksplicitno zavisi od gustine nanoica i odnosa
provodnosti kontakta i nanoice. Koristei predloeni model kvantifiko-
vali smo odnos izmeu optiqke transparentnosti i elektriqne provodnosti
prozirne mree nanoica. Za tankoslojne tranzistore zasnovane na sluqa-
jnim mreama neselektovanih jednozidnih ug eniqnih nanotuba, odredili smo
ihovu gustinu, duinu i dimenzije kanala pri kojima tranzistori istovre-
meno dostiu visoku struju provoea i visok odnos struje provoea i struje
curea. Konaqno, pokazali smo da je slab ee izlaznih svojstava GaAs=AlGaAs
kvantnog kaskadnog lasera u prisustvu jakog spo axeg magnetnog po a znaqa-
jno odreeno prisustvom rasejaa na povrxinskim neravninama. Takoe, pred-
stavili smo efikasan numeriqki algoritam za optimizaciju parametara akti-
vnog regiona kvantnog kaskadnog lasera i izraqunavae egovih izlaznih
karakteristika u magnetnom polju.
Authors Key words
transport processes, percolation theory, random nanowire networks,
transparent conductors, random carbon nanotube networks, thin-lm transistors,
interface roughness scattering, quantum cascade lasers
Authors Key words
transportni procesi, perkolaciona teorija, neureene mree
nanoica, prozirni provodnici, neureene mree ug eniqnih nanotuba, tanko-
slojni tranzistori, rasejae na povrxinskim neravninama, kvantni kaskadni
laseri
Classification
621.383.51:66.017(043.3)
Type
Tekst
Abstract (en)
A functionality of modern nanoelectronic devices cannot be precisely described
without using appropriate statistical methods and models needed for understanding
dierent transport properties in those devices. Therefore, in this thesis we develop
and integrate dierent numerical approaches for modeling and optimization of
transport processes, such as algorithms for percolation detection, conjugate gradient
methods, and simulated annealing algorithms. Using these methods and algorithms
we propose dierent models that describe and optimize eects of structural and geometrical
parameters on transport properties of modern nanoelectronic devices, such
as transparent conducting nanowire networks, thin-lm carbon nanotube transistors,
and quantum cascade lasers. For transparent networks of randomly distributed
conducting nanowires, we propose an electrical conductivity model that explicitly
depends on the nanowire density and junction-to-nanowire conductance ratio. Using
the proposed model we quantify a relationship between the optical transparency
and the electrical conductivity of the transparent nanowire networks. For thin-lm
transistors based on random networks of as-grown single-walled carbon nanotubes,
we determine the carbon nanotube density, length, and channel dimensions under
which the transistors simultaneously attain high on-current and high on/o ratio.
Finally, we show that the decrease in the output characteristics of GaAs/AlGaAs
quantum cascade laser in the presence of an intense external magnetic eld is signi-
cantly moderated by the presence of interface roughness scattering. We also present
an ecient numerical algorithm for optimization of quantum cascade laser active
region parameters and calculation of its output characteristics in a magnetic feld.
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